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philips semiconductors AN1890 using the sa7025 (reva) and sa8025a for narrow band systems author: wing s. djen 1997 aug 20 integrated circuits
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems author: wing s. djen 72 1997 aug 20 introduction the sa7025 (reva) and sa8025a are improved versions of the sa7025 and sa8025 suitable for narrow band systems like the america digital cellular system (is-54) and japan personal digital cellular system (pdc). the new design improves the performance of the fractional spurs compensation, which is a by-product of the fractional-n divider. complete design procedure and performance measurements on both the sa7025 (reva) and sa8025a are included in this document. the basics of the fractional-n pll frequency synthesizers can be found in philips semiconductors application note an1891, asa8025 fractional-n synthesizer for 2ghz band applicationso. an1891 can be used in conjunction with this document for designing-in the sa7025, sa8025, sa7025 (reva), and sa8025a. fractional spurs compensation the fractional-n divide ratio is achieved by changing the divide ratio between n and n+1. in lock condition, this technique will introduce an instantaneous phase error in the phase detector. this causes the vco to generate unwanted spurs at the offset of the fractions of the comparison frequency. on the new sa7025 (reva) and sa8025a, the fractional compensation circuitry was re-designed to achieve better performance. three improvements can be found on the sa7025 (reva) and sa8025a due to this modification: 1. the cn range is much tighter. the cn values are the binary current setting factor for the charge pumps. these values may be varied across the desired frequency band (e.g. 25mhz) for fractional spurs compensation. for the sa7025/sa8025, the cn range is greater than 50 for narrow band systems (e.g. channel spacing, f ch =30khz). for the new sa7025 (reva)/sa8025a, this range is much tighter and a fixed cn value is usually good enough for all synthesized frequencies on the sa7025 (reva)/sa8025a. 2. a more accurate calculation of the resistor rf, which determines the amount of fractional compensation current. eq. 1 gives an approximate value of i rf . rf can be calculated using eq. 2, which is the same as the one for calculating resistor rn. to obtain an optimum performance, the cn value can be adjusted accordingly. (1) i rf 3 i rn cn f xtal q f vco rf v dda 0.9 150 i rf i rf (2) 3. better performance over temperature. the variation of fractional spurs was minimized over the rated temperature range (-40 to +80 c). compatibility between the sa7025/sa8025 and sa7025 (reva)/sa8025a the sa7025/sa8025 and sa7025 (reva)/sa8025a are pin-to-pin compatible and have exactly the same performance except for the fractional compensation section. when replacing the sa7025/sa8025 with sa7025 (reva)/sa8025a, new values for cn and resistor rf may have to be used. users should calculate resistor rf using eq. 1 and 2 and experiment with it on the bench with the new rf value. pll design equations d : final frequency resolution after settling. frequency error after settling switchin g step (3) t sw : switching time (sec) f n : natural frequency of the 2nd order system(hz) , w n = 2 p f n (rad/s) n : total divide ratio x : : damping factor of the 2nd order system. typical value is 0.707. k vco : vco gain (hz/v) or 2 p * vco gain (rad/v) k f : phase detector gain = i cp /2 p (a/rad) n ln ( 1 2 ) t sw (4) c 1 k k vco n n 2 (5) r 1 2 n k k vco c 1 0.5 (6) c 2 c 1 10 (7) 1 c 3 r 2 (8) w should be at least 10 times larger than w n note: the unit of the factor k k vc o is unity when all the variables are expressed in radians. therefore, designers can simply multiply the charge pump output current (i cp ) with the vco gain in hz/v to obtain this factor. vco r 2 r 1 c 1 c 2 c 3 php phi sr00042 figure 1. 3-poles rc lowpass loop filter sa7025 (reva) design example this section shows a design example using the sa7025 (reva) for the is-54. the system parameters are as follows: vco frequency (f vco ) = 913 to 938mhz channel spacing (f ch ) = 30khz comparison frequency (f comp ) = 8 * 30 khz = 240khz switching time (t sw ) = 1.5ms switching step = 25mhz frequency error = within 1 khz vco gain (k vco ) = 12mhz/v (measured), murata mqe001-926 reference crystal (f ref ) = 14.4mhz 1. determine total divide ratio n to synthesize channels from 913 to 938mhz with f comp =240khz, n should be between 3804 and 3908. for the same loop components, a larger value of n yields lower natural frequency (f n ). so, jumping from high-end to low-end (larger n) is slower than from low-end to
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 73 high-end (smaller n). to ensure the same switching time from both directions, we use n=3908 for the worst case. 2. determine w n 1000 25e6 0.04e-3 using eq. 3 pick x = 0.707 and use t sw = 1.5ms. n -ln (0.04e-3 0.707) 0.707 1500e-6 9830 using eq. 4 3. determine rn and i cp pick rn = 51 k w and cn = 200. i rn becomes 58 m a when v dda =5v. using the php charge pump current equation i cp 200 58e-6 32 363 a 4. determine r 1 , c 1 , and c 2 using eq. 5 with the 2 p 's from k vco (rad/v) and k f (a/rad) cancel out c 1 12e6 363e-6 3908 9830 2 11.5nf r 1 2 0.707 3908 12e6 363e-6 11.5e-9 0.5 13k using eq. 6 c 2 11.5e-9 10 1.15nf using eq. 7 5. determine r 2 and c 3 r 2 and c 3 can help attenuate the comparison spurs at 240khz offset. 1 r 2 c 3 10 n using eq. 8 6. determine rf crystal frequency (f xtal ) = 14.4mhz mid vco frequency (f vco ) = 926mhz q (fractional modulus) = 8 using eq. 1 and eq. 2 i rf 3 58e-6 200 14.4e6 8 926e6 67.65 a rf 5 0.9 150 67.65e-6 8 926e6 43k a minor adjustment of cn maybe required if optimum fractional spurs suppression is needed across the 25mhz band. the experimental results yielded the best spurious suppression at a value of rf=47k w . component values used on the sa7025(rev a) demo board: c31 = 10 nf r23 = 13 k w c32 = 1 nf r24 = 100 k w c33 = 18 pf r21 = 47 k w (rf) r22 = 51 k w (rn) cn = 200 strobe width = 260 m s measurement results of the sa7025 (reva) figure 2 shows the measured close-in noise at 940.05mhz. the phase noise at 1khz carrier offset is -49.4 - 10 * log (100) = -69.4 dbc/hz. fractional spurs performance is shown in figures 3 to 6. the worst case spurs occur when nf=1 and nf=7 are less than -60dbc. spurs at the alternate channel, the 60khz carrier offset required by the is-54, are totally suppressed. figures 7 and 8 show the measured switching times. these results show that the pll can jump a 25mhz step in less than 1.5ms from both directions. table 1 shows the difference in performance between the sa7025 and sa7025 (reva) using the same demoboard. unless otherwise mentioned, cn=200, rn=51k w , rf=47k w . speed-up design for achieving better close-in noise better close-in noise can be achieved at the expense of operational current. the php charge pumps on the sa7025 (reva) and sa8025a are both capable of delivering more than 1.5ma in the speed-up mode. to stay in this mode, the strobe signal has to be kept high after the programming word `a' is sent. the cl register sets the amount of charge pump current which is either 3 times (cl=0), 5 times (cl=1), or 9 times (cl=2) higher than the current in normal mode. assume that we want to modify the previous design and use speed-up with cl=1. this implies that the charge pump output current becomes 5*363 m a = 1.8ma. in order to maintain the same natural frequency, the value of c31 and c32 is increased by a factor of 5 and r23 is decreased by the same factor of 5. therefore, the new values used on the demo board are: c31 = 100nf in parallel with 100nf c32 = 4.7nf r23 = 2.4k w figure 9 compares the close-in phase noise of the two designs with the same natural frequency. the bottom trace has a 4db improvement in the close-in noise when speed-up mode (higher current) is used. since the phase noise beyond the loop bandwidth is solely determined by the vco phase noise, two traces start to merge together at about 5khz offset. sa8025a design example this section shows a design example using the sa8025a for the personal digital system (pdc1500), a narrow band system. the design procedure is the same as the previous section. the system parameters are as follows: vco frequency (f vco ) = 1607 to 1631 mhz channel spacing (f ch ) = 25khz comparison frequency (f comp ) = 8 * 25khz = 200khz switching time (t sw ) = 1.5ms switching step = 24mhz frequency error = within 1khz vco gain (k vco ) = 24 mhz/v (measured), murata mqe060-1619 reference crystal (f ref ) = 19.2mhz
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 74 table 1. performance comparison: sa7025 to sa7025 (rev a) sa7025 sa7025 (rev a) figure fractional spurs (dbc) @30khz, vco=912.99mhz -57.6 (cn=200, rf=2m w ) -63.6 3 fractional spurs (dbc) @60khz, vco=912.99mhz not present (cn=200, rf=2m w ) not present 3 fractional spurs (dbc) @30khz, vco=939.87mhz -63.5 (cn=100, rf=2m w ) -63.9 5 fractional spurs (dbc) @60khz, vco=939.87mhz not present (cn=100, rf=2m w ) not present 5 close-in noise (dbc/hz) @1khz, vco=1631.025mhz -69 -69 2 i total (ma) for the demo board 21.2 21.2 switching time (ms) <1.5 <1.5 7, 8 1. determine total divide ratio n n 1631mhz 200khz 8155 2. determine w n 1000 24e6 0.042e-3 using eq. 3 pick x = 0.707 and use t sw = 1.5ms. n - ln (0.042e-3 0.707) 0.707 1500e-6 9830 using eq. 4 3. determine r n and i cp pick rn = 51k w and cn = 200. i rn becomes 58 m a when v dda =5v. using the php charge pump current equation i cp 200 58e-6 32 363 a 4. determine r 1 , c 1 , and c 2 using eq. 5 c 1 24e6 363e-6 8155 9830 2 11.1nf r 1 2 0.707 8155 24e6 363e-6 11.1e-9 13k using eq. 6 c 2 11.1e-9 10 1.1nf using eq. 7 5. determine r 2 and c 3 r 2 and c 3 can help attenuate the comparison spurs at 200khz offset. 1 r 2 c 3 10 n using eq. 8 pick r 2 = 360k w , then c 3 = 18pf. 6. determine rf crystal frequency (f xtal ) = 19.2mhz mid vco frequency (f vco ) = 1619mhz q (fractional modulus) = 8 using eq. 1 and eq. 2 i rf 3 58e-6 200 14.4e6 8 926e6 67.65 a rf 5 0.9 150 67.65e-6 8 926e6 43k minor adjustment of cn is required if optimum fractional spurs suppression is needed. component values used on the demo board: c31 = 10nf r23 = 13k w c32 = 1nf r24 = 360k w c33 = 18pf r21 = 56k w (rf) r22 = 51k w (rn) cn = 200 strobe width = 260 m s measurement results of the sa8025a close-in phase noise spectrum is shown in the figure 10. at 1khz carrier offset, the phase noise is -45.3 - 10*log (100) = -65.3 dbc/hz. the 3db loop bandwidth is 3khz, which is about twice as much as the loop natural frequency (f n ). fractional spurs performance is shown in figure 11 to 14. worst case spurs when nf=1 and nf=7 for the low and high bands are all less than -59dbc. spurs at 50khz carrier offset, the alternate channel for pdc1500, were totally suppressed. switching time measurements are shown in figure 15 and 16. the pll can reach the desired frequency for a 24mhz jump in less than 1.5ms from both directions. table 2 shows the difference in performance between the sa8025 and sa8025a using the same demoboard. unless otherwise mentioned, cn=200, rn=51k w , rf=56k w .
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 75 table 2. performance comparison: sa8025 to sa8025a sa8025 sa8025a figure fractional spurs (dbc) @25khz, vco=1606.625mhz -41.5 (cn=250, rf=560k w ) -60.6 11 fractional spurs (dbc) @50khz, vco=1606.625mhz not present (cn=250, rf=560k w ) not present 11 fractional spurs (dbc) @25khz, vco=1631.025mhz -59.0 (cn=200, rf=560k w ) -59.5 13 fractional spurs (dbc) @50khz, vco=1631.025mhz not present (cn=200, rf=560k w ) not present 13 close-in noise (dbc/hz) @1khz, vco=1631.025mhz -65 -65 10 i total (ma) for the demo board 28.3 28.3 switching time (ms) <1.5 <1.5 15, 16 sa8025a for the phs system philips semiconductors applications note an1891, ausing the sa8025 in 2ghz band applicationso, shows a design for the phs system based on the sa8025. if the sa8025a is used in the same design, only rf needs to be changed. crystal frequency (f xtal ) = 19.2mhz mid vco frequency (f vco ) = 1665mhz q (fractional modulus) = 8 i rn = 80 m a cn = 100 using eq. 1 and eq. 2 i rf 3 80e-6 100 19.2e6 8 1865e6 34.6 a rf 3 0.9 150 34.6e-6 34.6e-6 35.2k on the demo board, rf=36k w was used. the measured fractional spurs when nf=1 and nf=7 are both better than -70dbc. table 3 summarizes the components change for the sa7025/sa8025 and the sa7025 (reva)/sa8025a demo boards. table 3. summary of component changes component sa7025 sa7025 (rev a) sa8025 sa8025a r21 560k w 47k w 560k w 36k w r22 33k w 51k w 10k w 10k w r23 24k w 13k w 10k w 10k w r24 22k w 100k w 18k w 18k w r25 22k w 0 w 0 w 0 w c30 330pf nl nl nl c31 3.3nf 10nf 3.9nf 3.9nf c32 220pf 1nf 390pf 390pf c33 220pf 18pf 150pf 150pf c34 100pf nl nl nl nl = not loaded
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 76 ref -10.6 dbm atten 10 db mkr d 1.00 khz -49.40 db center 940.04915 mhz resbw 100 hz vbw10 hz span 10.00 khz swp20 sec 10db/ sr00043 figure 2. close-in noise at 940.05mhz ref -10.6 dbm atten 10 db mkr d 30.0 khz -63.30 db center 912.9896 mhz res bw 1 khz vbw100 hz span 200.0 khz swp 1.5 sec 10db/ sr00044 figure 3. fractional spurs, (f vco = 912.99mhz; nf = 1) ref -10.6 dbm atten 10 db mkr d 30.0 khz -62.00 db center 913.1693 mhz res bw 1 khz vbw100 hz span 200.0 khz swp 1.5 sec 10db/ sr00045 figure 4. fractional spurs, (f vco = 913.17mhz; nf = 7) ref -11.2 dbm atten 10 db mkr d 30.0 -65.90 db center 939.8700 mhz res bw 1 khz vbw 100 hz span 200.0 khz swp 1.5 sec 10db/ sr00046 figure 5. fractional spurs, (f vco = 939.87mhz; nf = 1) ref -10.6 dbm atten 10 db mkr d 30.0 khz -67.60 db center 940.0490 mhz res bw 1 khz vbw100 hz span 200.0 khz swp 1.5 sec 10db/ sr00047 figure 6. fractional spurs, (f vco = 940.05mhz; nf = 7) 912.9914381 mhz 912.9904381 mhz 912.9894381 mhz freq c tlk only waiting for trigger -5.000ms t 1 0.00s 0.00s t 2 1.500ms 5.000ms d 1.500ms 1.000ms/div vertical center/ span top/ bottom center span m z 912.9904381 h k z 2.0000 h 250.0 /div z h find center find center and span ref int sr00048 figure 7. switching time (939.87 to 912.99mhz step to within 1khz)
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 77 939.8715090 mhz 939.8705090 mhz 939.8695090 mhz freq c tlk only waiting for trigger -5.000ms t 1 0.00s 0.00s t 2 1.500ms 5.000ms d 1.500ms 1.000ms/div vertical center/ span top/ bottom center span m z 939.8705090 h k z 2.0000 h 250.0 /div z h find center find center and span ref int sr00049 figure 8. switching time (912.99 to 939.87mhz step to within 1khz) ref -11.2 dbm atten 10 db mkr d 1.00 khz -49.60 db center 912.97668 mhz res bw 100 hz vbw100 hz span 10.00 khz swp 3.0 sec 10db/ vid avg 22 sr00050 figure 9. close-in phase noise when cl = 1 ref -11.5 dbm atten 10 db mkr d 1.00 -45.30 center 1631.02784mhz res bw 100 hz vbw100 hz span swp 10db/ vid avg 22 khz db 10.00 khz 3.0 sec sr00051 figure 10. close-in phase noise at 1631.025mhz ref -10.8 dbm atten 10 db mkr d 25.0 -60.60 center 1606.6278 mhz res bw 1 khz vbw30 hz span swp 10db/ khz db 100 7.5 sec khz sr00052 figure 11. fractional spurs, (f vco = 1606.625mhz; nf = 1) ref -10.8 dbm atten 10 db mkr d 25.0 -59.10 center 1606.7779 mhz res bw 1 khz vbw30 hz span swp 10db/ khz db 100 7.5 sec khz sr00053 figure 12. fractional spurs, (f vco = 1606.775mhz; nf = 7) ref -10.8 dbm atten 10 db mkr d 25.0 -59.50 center 1631.0279 mhz res bw 1 khz vbw30 hz span swp 10db/ khz db 100 7.5 sec khz sr00054 figure 13. fractional spurs, (f vco = 1606.775mhz; nf = 7)
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 78 ref -10.8 dbm atten 10 db mkr d 25.0 -62.00 center 1631.1779 mhz res bw 1 khz vbw30 hz span swp 10db/ khz db 100 7.5 sec khz sr00055 figure 14. fractional spurs, (f vco = 1631.175mhz; nf = 7) 1.6066300674 ghz 1.6066290674 ghz 1.6066280674 ghz freq c tlk only waiting for trigger -5.000ms t 1 0.00s 0.00s t 2 1.500ms 5.000ms d 1.500ms 1.000ms/div vertical center/ span top/ bottom center span g z 1.6066290674 h k z 2.0000 h 250.0 /div z h find center find center and span ref int sr00056 figure 15. switching time (1631.025 to 1606.625mhz step to within 1khz) 1.6310297344 ghz 1.6310287344 ghz 1.6310277344 ghz freq c tlk only waiting for trigger -5.000ms t 1 0.00s 0.00s t 2 1.500ms 5.000ms d 1.500ms 1.000ms/div vertical center/ span top/ bottom center span g z 1.6310287344 h k z 2.0000 h 250.0 /div z h find center find center and span ref int sr00057 figure 16. switching time (1606.625 to 1631.025mhz step to within 1khz)
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 79 sr01018 sa602 figure 17. sa7025dk application circuit
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 710 components values shown as: phs (pdc1500) r21 r24 18k (360k) 36k (56k) r22 10k (51k) c35 100nf c29 100nf r25 or c34 ul vdda c28 100nf led d1 r20 560r c21 100nf vdd r26 nl r23 10k (13k) c30 nl c31 3.9nf (10nf) c32 390pf (1nf) c33 150pf (18pf) g2 vco m g p c g b 1 2 3 6 5 4 vosc mqe530-1667mhz r14 18r r15 18r r16 18r jp3 rf-out r17 10k c26 150nf r19 8.2k c27 10nf c24 8.2pf r18 9.1k u1 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 clk data stb vssd rf in+ rf in vccp ref in ra auxin vdd test lock rf rn vdda php phi vssa pha jp1 clk data stb vosc g1 5 4 3 2 1 vcc nc gnd out tew-tcxo 19.2mhz c8 100nf in-ref r8 or j3 tp c9 1nf c10 1nf c11 10nf 5v vaux c13 1nf vaux r11 27r c22 c15 1nf r13 51r c20 12pf r12 10k c18 8.2pf l1 180nh c19 1nf l2 750nh 3.9pf c23 15pf vr! bb215 jp2 aux-out 1 2 3 4 8 7 6 5 u5 sa602a inp-a inp-b gnd outa vcc osce oscb outb c16 18pf c17 56pf + c3 4.7uf 10v c12 100nf r10 10k r9 130k 3v vdd + c7 4.7uf 10v r7 4.3k c6 100nf r6 3.3k 3 2 1 u3 lm317lz in out adj + c5 47uf 10v 4v vosc 5v vdda r5 0 r3 3.3k r4 4.3k (9.1k) u2 lm317lz 32 1 adj in c4 100nf out 8v power r1 3.3k u3 lm317lz 32 1 adj in out + c1 4.7uf 10v r2 9.1k c2 100nf gnd (mqe060-1619mhz) sa8025a sr01019 figure 18. sa8025adk application circuit
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 711 top silk screen sr01020 figure 19. sa8025adk demoboard layout (not actual size)
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 712 table 4. customer application component list for sa7025dk qty. value volt part reference part description vendor mfg part number surface mount capacitors 1 3.9pf 50v c22 cap. cer. 1206 npo 0.5pf garrett rohm mch315a3r9ck 2 8.2pf 50v c24, c18 cap. cer. 1206 npo 0.5pf garrett rohm mch315a8r2ck 1 12pf 50v c20 cap. cer. 1206 npo 5% garrett rohm mch315a120jk 1 15pf 50v c23 cap. cer. 1206 npo 5% garrett rohm mch315a150jk 2 18pf 50v c16, c33 cap. cer. 1206 npo 5% garrett rohm mch315a180jk 1 56pf 50v c17 cap. cer. 1206 npo 5% garrett rohm mch315a560jk 6 1000pf 50v c9, c10, c13, c15, c19, c32 cap. cer. x7r 10% garrett rohm mch315a102jp 4 0.01 m f 50v c11, c25, c27, c31 cap. cer. x7r 10% garrett rohm mch315c103kk 9 0.1 m f 50v c2, c4, c6, c8, c12, c21, c28, c29, c35 cap. cer. x7r 10% garrett rohm mch315c104kp 1 0.15 m f 16v c26 cap. cer. x7r 10% garrett rohm mch315c154kp 4 4.7 m f 10v c1, c3, c5, c7 tant. chip cap. a 3216 10% garrett philips 49mc475b010koas surface mount resistors 2 0 w 50v r8, r25 res. chip 1206 1/8w 5% garrett rohm mcr18jw000e 3 18 w 50v r14, r15, r16 res. chip 1206 1/8w 5% garrett rohm mcr18jw180e 1 27 w 50v r11 res. chip 1206 1/8w 5% garrett rohm mcr18jw270e 1 51 w 50v r13 res. chip 1206 1/8w 5% garrett rohm mcr18jw510e 1 100 w 50v r5 res. chip 1206 1/8w 5% garrett rohm mcr18jw101e 1 560 w 50v r20 res. chip 1206 1/8w 5% garrett rohm mcr18jw561e 3 3.3k w 50v r1, r3, r6 res. chip 1206 1/8w 5% garrett rohm mcr18jw332e 1 4.7k w 50v r7 res. chip 1206 1/8w 5% garrett rohm mcr18jw472e 1 8.2k w 50v r19 res. chip 1206 1/8w 5% garrett rohm mcr18jw822e 3 9.1k w 50v r2, r18, r4 res. chip 1206 1/8w 5% garrett rohm mcr18jw912e 3 10k w 50v r10, r12, r17 res. chip 1206 1/8w 5% garrett rohm mcr18jw103e 1 13k w 50v r23 res. chip 1206 1/8w 5% garrett rohm mcr18jw133e 1 47k w 50v r21 res. chip 1206 1/8w 5% garrett rohm mcr18jw473e 1 51k w 50v r22 res. chip 1206 1/8w 5% garrett rohm mcr18jw513e 1 100k w 50v r24 res. chip 1206 1/8w 5% garrett rohm mcr18jw104e 1 130k w 50v r9 res. chip 1206 1/8w 5% garrett rohm mcr18jw134e 1 560k w 50v r21 res. chip 1206 1/8w 5% garrett rohm mcr18jw564e surface mount diodes 1 vr1 (varactor) variable capacitance smd diode digikey philips bb215 1 d1 sm led digikey surface mount inductors 1 0.18 m h l1 chip inductor 1008 10% coilcraft coilcraft 1008cs-181xkbb 1 0.75 m h l2 chip inductor 1008 10% coilcraft coilcraft 1008cs-751xkbb voltage regulators 3 100ma u1, u2, u3 voltage regulator digikey national lm317lz tcxo 1 14.4mhz g1 temp. controlled crystal osc. tew tew txs0924m-14.4mhz vco 1 926mhz g2 voltage controlled osc. murata murata erie mqe001-926 surface mount integrated circuits 1 u4 1ghz fractional-n synthesizer philips philips sa7025dk 1 u5 double balanced mixer oscillator philips philips sa602a miscellaneous 3 jp1, jp2, jp3 sma right angle jack receptacle newark ef johnson 142-0701-301 1 j1 male 6-pins connector stocko stocko mks1956-6-0-606 1 j2 male 2-pins connector stocko stocko mks1851-6-0-202 1 j3 test point digikey 3m 929647-36 1 printed circuit board philips philips sa7025/8025-m 75 total parts
philips semiconductors application note AN1890 using the sa7025(reva) and sa8025a for narrow band systems 1997 aug 20 713 table 5. customer application component list for sa8025adk qty. part value volt part reference part description vendor mfg part number surface mount capacitors 1 3.9pf 50v c22 cap. cer. 1206 npo 0.5pf garrett rohm mch315a3r9ck 2 8.2pf 50v c24, c18 cap. cer. 1206 npo 0.5pf garrett rohm mch315a8r2ck 1 12pf 50v c20 cap. cer. 1206 npo 5% garrett rohm mch315a120jk 1 15pf 50v c23 cap. cer. 1206 npo 5% garrett rohm mch315a150jk 1 18pf 50v c16 cap. cer. 1206 npo 5% garrett rohm mch315a180jk 1 56pf 50v c17 cap. cer. 1206 npo 5% garrett rohm mch315a560jk 1 150pf 50v c33 cap. cer. 1206 npo 5% garrett rohm mch315a151jk 1 390pf 50v c32 cap. cer. 1206 npo 5% garrett rohm mch315a391jk 5 1000pf 50v c9, c10, c13, c15, c19 cap. cer. x7r 10% garrett rohm mch315a102jp 1 3900pf 50v c31 cap. cer. x7r 10% garrett rohm mch315c392kk 3 0.01 m f 50v c11, c25, c27 cap. cer. x7r 10% garrett rohm mch315c103kk 9 0.1 m f 50v c2, c4, c6, c8, c12, c21, c28, c29, c35 cap. cer. x7r 10% garrett rohm mch315c104kp 1 0.15 m f 16v c26 cap. cer. x7r 10% garrett rohm mch315c154kp 4 4.7 m f 10v c1, c3, c5, c7 tant. chip cap. a 3216 10% garrett philips 49mc475b010koas surface mount resistors 3 0 w 50v r5, r8, r25 res. chip 1206 1/8w 5% garrett rohm mcr18jw000e 3 18 w 50v r14, r15, r16 res. chip 1206 1/8w 5% garrett rohm mcr18jw180e 1 27 w 50v r11 res. chip 1206 1/8w 5% garrett rohm mcr18jw270e 1 51 w 50v r13 res. chip 1206 1/8w 5% garrett rohm mcr18jw510e 1 560 w 50v r20 res. chip 1206 1/8w 5% garrett rohm mcr18jw561e 3 3.3k w 50v r1, r3, r6 res. chip 1206 1/8w 5% garrett rohm mcr18jw332e 2 4.3k w 50v r4, r7 res. chip 1206 1/8w 5% garrett rohm mcr18jw432e 1 8.2k w 50v r19 res. chip 1206 1/8w 5% garrett rohm mcr18jw822e 2 9.1k w 50v r2, r18 res. chip 1206 1/8w 5% garrett rohm mcr18jw912e 5 10k w 50v r10, r12, r17, r22, r23 res. chip 1206 1/8w 5% garrett rohm mcr18jw103e 1 18k w 50v r24 res. chip 1206 1/8w 5% garrett rohm mcr18jw183e 1 36k w 50v r21 res. chip 1206 1/8w 5% garrett rohm mcr18jw364e 1 130k w 50v r9 res. chip 1206 1/8w 5% garrett rohm mcr18jw134e surface mount diodes 1 vr1 (varactor) variable capacitance smd diode digikey philips bb215 1 d1 sm led digikey surface mount inductors 1 0.18 m h l1 chip inductor 1008 10% coilcraft coilcraft 1008cs-181xkbb 1 0.75 m h l2 chip inductor 1008 10% coilcraft coilcraft 1008cs-751xkbb voltage regulators 3 100ma u1, u2, u3 voltage regulator digikey national lm317lz tcxo 1 19.2mhz g1 temp. controlled crystal osc. tew tew txs1034n-19.2mhz vco 1 1667mhz g2 voltage controlled osc. murata murata erie mqe530-1667 surface mount integrated circuits 1 u4 2ghz fractional-n synthesizer philips philips sa8025adk 1 u5 double balanced mixer oscillator philips philips sa602a miscellaneous 3 jp1, jp2, jp3 sma right angle jack receptacle newark ef johnson 142-0701-301 1 j1 male 6-pins connector stocko stocko mks1956-6-0-606 1 j2 male 2-pins connector stocko stocko mks1851-6-0-202 1 t3 test point digikey 3m 929647-36 1 printed circuit board philips philips sa7025/8025-m 75 total parts

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